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发明专利(部分): 1. 常帅; 钟海政; 载流子传输层的制备方法及磁控溅射装置, 2019-10-29, 中国, ZL201711046174.1. 2. 钟海政; 常帅; 陈小梅; 量子点发光层、量子点发光器件及其制备方法, 2020-07-31, 中国, ZL201810743690.8. 3. 常帅; 钟海政; 韩登宝; 二极管器件及其制造方法、二极管装置, 2020-11-03, 中国, ZL201810834224.0. 4. 张欣; 钟海政; 常帅; 量子点发光二极管及其制备方法、显示面板, 2021-01-26, 中国, ZL201810551297.9. 5. 常帅; 韩登宝; 王辰晖; 钟海政; 用于测量瞬态电致发光的系统和方法, 2021-01-01, 中国, ZL201910960507.4. 6. Shuai Chang; Haizheng Zhong; Dengbao Han, Diode Device And Method For Manufacturing The Same, And Diode Apparatus, 2020-03-17, 美国,US 10,593,735 B2 7. Haizheng Zhong; Shuai Chang; Xiaomei Chen, Quantum Dot Light-Emitting Layer, Quantum Dot Light-Emitting Device And Preparing Methods Therefor, 2021-04-06, 美国,US 10,971,692 B2 8. Xin Zhang; Haizheng Zhong; Shuai Chang, Quantum Dot Light Emitting Diode And Method For Manufacturing The Same, And Display Panel, 2022-10-04, 美国,US 11,462,706 B2
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